nothing new here, except mistakes
Samsung 128GB TSV DDR4 RDIMM was announced in November: http://www.businesswire.com/news/home/20151125005775/en/Samsung-Starts-Mass-Producing-Industry%E2%80%99s-128-Gigabyte-DDR4
Perhaps this will result in cheaper 128 GB modules than when Samsung uses TSV, but it's not a new capacity point. And what's this?
"Samsung kind of cracks the 10nm barrier with new 8GB DDR4 slabs... Samsung's promising 10nm RAM in modules from 4GB to 128GB"
Maybe you meant 8 gigabit chips?
http://www.businesswire.com/news/home/20160404006492/en/Samsung-Starts-Mass-Producing-Industry%E2%80%99s-10-Nanometer-Class
"Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced today that it has begun mass producing the industry’s first 10-nanometer (nm) class* , 8-gigabit (Gb) DDR4 (double-data-rate-4) DRAM chips and the modules derived from them"
Yup.