Ahh Hafnium based gate dielectrics don't you just love it.
Silicon Dioxide has been in the process of being replaced by variations of Hafnium alloys and oxides as the transistor gate oxide dielectric for ages now. It's nice to see that it's finally been cracked and that all those horrible reliability issues that have frustrated this happening for so long have been resolved.
Did I hear someone say NBTI?
No shush thats not real. you're measuring it wrong...
In all IBMs openness I didn't see a mention of what metal they're using as a gate contact in their shiny new process. We shall wait and see.